Cell Design

Copper Indium Selenide (CuInSe2) and related multinary compounds have extremely high optical absorption coefficients that allow nearly all of the available light within the terrestrial spectrum to be absorbed in the first micrometer of the material. Therefore, the total thickness of the active layers in SoloPower devices is in the order of 2 micrometers, resulting in efficient use of materials without negatively impacting the conversion efficiency. The microstructure of SoloPower absorbers are comparable to those grown by expensive physical vapor deposition techniques.

SoloPower technology has the capabilities to add controlled amounts of gallium and/or sulfur into the CuInSe2 absorber layer to adjust its energy gap, thereby allowing device designs which yield higher voltage, better carrier collection and higher conversion efficiency. SoloPower devices may be packaged into rigid or flexible structures depending on the requirements of the various applications.